Effect of the quantum confinement on the optical absorption of porous silicon, investigated by a new in-situ method

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 167-170

  Diesinger, Heinrich ^a   Bsiesy, Ahmad ^a   Hérino, Roland ^a   Gelloz, Bernard ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

Density of states; Optical absorption coefficient; Photocurrent; Porous silicon; Quantum confinement

Indexed keywords

LIGHT ABSORPTION; PHOTOCURRENTS; PHOTOLUMINESCENCE; POROUS SILICON; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

OPTICAL ABSORPTION COEFFICIENTS; QUANTUM CONFINEMENTS;

SEMICONDUCTING SILICON;

EID: 0033886963     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00251-2     Document Type: Article

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