Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organic chemical vapor deposition

Applied Surface Science

Volumn 157, Issue 3, 2000, Pages 123-128

  Williams, M D ^a   Greene, A L ^a   Daniels Race, T ^b   Lum, R M ^c  

^a CLARK ATLANTA UNIVERSITY   (United States)

^b DUKE UNIVERSITY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

MULTILAYERS;

EID: 0033886064     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00488-2     Document Type: Article

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