Quantitative TOF-SIMS analysis of metal contamination on silicon wafers

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 173-177

  Zanderigo, F ^a   Ferrari, S ^b   Queirolo, G ^a   Pello, C ^c   Borgini, M ^c  

^a STMICROELECTRONICS   (Italy)

^b LABORATORIO MDM   (Italy)

^c MEMC   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; ETCHING; HYDROFLUORIC ACID; METALS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE;

RELATIVE SENSITIVITY FACTORS; VAPOR PHASE DECOMPOSITION;

SILICON WAFERS;

EID: 0033884451     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00456-0     Document Type: Article

References (4)

1. Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, Semiconductor Industry Association (SIA), San Jose, CA, USA, 1997.
2. Schnieder A., Mollers R., Terhorst M., Cramer H.-G., Niehuis E., Benninghoven A. J. Vac. Sci. Technol. B. 14:1996;4.
3. Douglas M.A., Chen P.J. Surface Interface Anal. 26:1998;984-994.
4. Iltegen K., Bendel C., Benninghoven A, Niehuis E. J. Vac. Sci. Technol. B. 15:1997;3.