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Volumn 209, Issue 4, 2000, Pages 751-762
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Numerical analysis on Hg1-xCdxTe growth by ACRT-VBM
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
CRYSTAL GROWTH FROM MELT;
FINITE DIFFERENCE METHOD;
FORCED CONVECTION;
INTERFACES (MATERIALS);
SEMICONDUCTOR GROWTH;
THERMAL EFFECTS;
VORTEX FLOW;
ACCELERATED CRUCIBLE ROTATION TECHNIQUE (ACRT);
MERCURY CADMIUM TELLURIDE;
VERTICAL BRIDGMAN METHOD (VBM);
SEMICONDUCTING CADMIUM TELLURIDE;
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EID: 0033882280
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00543-6 Document Type: Article |
Times cited : (25)
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References (17)
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