Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 716-723

  Fukuto, H ^a   Feichtinger, P ^a   U'Ren, G D ^a   Lindo, S ^a   Goorsky, M S ^a   Magee, T ^b   Oster, D ^b   Moreland, J ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Wacker Siltronic Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; DISLOCATIONS (CRYSTALS); ETCHING; INTERFACES (MATERIALS); NUCLEATION; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON WAFERS; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

LANG TRANSMISSION X RAY TOPOGRAPHY;

SEMICONDUCTING FILMS;

EID: 0033882069     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00632-6     Document Type: Article

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