Microstructural study of residual stress in chemically vapor deposited β-SiC

Surface and Coatings Technology

Volumn 124, Issue 2-3, 2000, Pages 262-265

  Lu, Y M ^a   Leu, I C ^b  

^a Dept Elec Eng Kung Shan Inst T ^*  (Taiwan)

^b Deparment Mat Sci Eng Natl C   (Taiwan)

Author keywords

Chemical vapor deposition; Graphite substrates; Methyltrichlorosilane; Wafer central deflection method

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; GRAPHITE; HYDROGEN; MICROSTRUCTURE; RESIDUAL STRESSES;

METHYLTRICHLOROSILANE;

SILICON CARBIDE;

EID: 0033881927     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00635-0     Document Type: Article

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