Failure mechanisms and recent improvements in ZnO arrester elements

IEEE Electrical Insulation Magazine

Volumn 16, Issue 1, 2000, Pages 25-31

  Andoh, H ^a   Nishiwaki, S ^a   Suzuki, H ^a   Boggs, S ^b   Kuang, J ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NonLineav Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC SURGES; ELECTRODES; ENERGY ABSORPTION; FAILURE ANALYSIS; LEAKAGE CURRENTS; OPTIMIZATION; ZINC OXIDE;

ZINC OXIDE ARRESTERS;

LIGHTNING ARRESTERS;

EID: 0033880790     PISSN: 08837554     EISSN: None     Source Type: Journal    
DOI: 10.1109/57.817419     Document Type: Article

References (4)

1. F. Greuter and G. Blatter, "Electrical Properties of Grain Boundaries in Polycrystalline Compound Semiconductors," Semiconductor Science and Technology, Vol. 5, 1990, pp. 111-137.
2. G. Blatter and F. Greuter, "Carrier Transport Through Grain Boundaries in Semiconductors," Physical Review B, Vol. 33, No. 6, 15 March 1986, pp. 3952-3966.
3. T. Imai, T. Udagawa, H. Andoh, Y. Tanno, Y. Kayano, and M. Kan, "Development of High Gradient Zinc Oxide Nonlinear Resistors and Their Applications to Surge Arresters," IEEE Trans PD, Vol. 13, No. 4, October 1998. pp. 1182-1187.
4. J. Kuang and S.A. Boggs, "Program for Transient Nonlinear Finite Element Analysis with Applications to Coupled Field Problems," Proceedings of the 1997 ISH (International Symposium on High Voltage Engineering), Montreal, Canada. Vol. 6, pp. 141-144.