Electrically active defects generated by MERIE and RIE-mode plasmas in thin SiO2-Si structures

Microelectronics Reliability

Volumn 40, Issue 3, 2000, Pages 381-425

  Atanassova, E ^a   Paskaleva, A ^a  

^a Institute OJSolid State Physics   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); MOS CAPACITORS; PLASMA APPLICATIONS; SILICA; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA INDUCED DEFECTS;

REACTIVE ION ETCHING;

EID: 0033880173     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00242-5     Document Type: Article

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