Laplacian growth models for porous silicon formation-stability analysis

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 345-348

  Rauscher, Markus ^a   Spohn, Herbert ^a  

^a UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CHARGE CARRIERS; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTROLYTES; ELECTROLYTIC POLISHING; ETCHING; HYDROFLUORIC ACID; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

INTERFACE GROWTH; LAPLACIAN MODEL; LINEAR STABILITY ANALYSIS; PORE FORMATION;

POROUS SILICON;

EID: 0033879140     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1009630920378     Document Type: Article

References (6)

1. L.T. Canham, Applied Physics Letters 57, 1046 (1990).
2. P. Pelcé, in Dynamics of Curved Fronts, edited by P. Pelcé (Academic Press, London, 1988), Part 1.
3. Y. Kang and J. Jorné, J. Electrochem. Soc. 140, 2258 (1993).
4. A. Valance, Physical Review B 55, 9706 (1997).
5. Y.E. Makushok, V.P. Parkhutik, J.M. Martinez-Duart, and J.M. Albella, J. Phys. D: Appl. Phys. 27, 661 (1994).
6. V. Lehmann, J. Electrochem. Soc. 140, 2836 (1993).