Optical properties of CdS layers grown by MOVPE on (211)B and (100) GaAs

Semiconductor Science and Technology

Volumn 15, Issue 4, 2000, Pages 408-412

  Sallet, V ^a   Lusson, A ^a   Tromson Carli, A ^a   Riviere A ^a   Riviere J P ^a   Rommeluere J F ^a   Marfaing, Y ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EXCITONS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

LUMINESCENCE SPECTRUM;

SEMICONDUCTOR GROWTH;

EID: 0033878401     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/4/318     Document Type: Article

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