Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 72, Issue 2, 2000, Pages 146-149

  Buyanova, I A ^a   Monemar, B ^a   Lindstrom J L ^b   Hallberg, T ^c   Murin, L I ^d   Markevich, V P ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

^c SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL DEFECTS; ELECTRON IRRADIATION; ELECTRONIC STRUCTURE; HIGH TEMPERATURE OPERATIONS; MAGNETOOPTICAL EFFECTS; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); RADIATION EFFECTS; SEMICONDUCTOR DOPING; SILICON WAFERS; THERMAL EFFECTS;

DEFECT FORMATION PROCESS; PHOTOLUMINESCENCE SPECTROSCOPY; RADIATIVE DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033878246     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00491-2     Document Type: Article

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6. J.L. Lindström, T. Hallberg, L.I. Murin, V.P. Markevich (unpublished).