Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructure

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 72, Issue 2, 2000, Pages 109-112

  Fonseca, Luis F ^a   Resto, O ^a   Soni, R K ^a   Buzaianu, M ^a   Weisz, S Z ^a   Gomez, M ^a   Jia, W ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ERBIUM; GRAIN SIZE AND SHAPE; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; SILICA; SILICON WAFERS; SPUTTERING; SYNTHESIS (CHEMICAL);

EMISSION INTENSITY; NANOCRYSTAL SIZE;

SEMICONDUCTING FILMS;

EID: 0033877695     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00505-X     Document Type: Article

References (7)

1. S. Coffa, G. Franzo, F. Prioló, MRS Bulletine, April 1998, 25.
2. Coffa S., Franzó G., Priolo F., Poloman A., Serna R. Phys. Rev. B. 49:1994;16313.
3. Stimmer J., Reittinger A., Nützel J.F., Holzbrecher H., Buchal Ch., Abstreiter G. Appl. Phys. Lett. 68:1996;23.
4. Wu X., Hömmerich U., Namavar F., Cremins-Costa A.M. Appl. Phys. Lett. 69:1996;1903.
5. M. Fujii, M. Yoshida, S. Hayashi, K. Yamamoto, J. Appl. Phys. 84 (1998) 4525.
6. L.F. Fonseca, O. Resto, R. Katiyar, S. Gupta, S.Z. Weisz, Y. Goldstein, A. Many, J. Shapir, Proceedings of the 24th ICPS (CD version), D. Gershoni (Ed.), World Scientific, 1999.
7. Hanak J.J., Lehman H.W., Wehner R.K. J. Appl. Phys. 43:1972;1666.