Raman analysis of wurtzite silicon islands in silicon oxide deposited in N2O-SiH4 plasma process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 2 B, 2000, Pages

  Bandet, Jacqueline ^a   Despax, Bernard ^b   Caumont, Michael ^a   Date, Lucien ^b  

^a Laboratoire de Physiques des Solides   (France)

^b Laboratoire de Genie Electrique

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA PROBES; RAMAN SCATTERING;

DIAMOND SILICON; MICROPROBE; RADIO FREQUENCY DISCHARGE; WURTZITE SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033877671     PISSN: 00214922     EISSN: None     Source Type: None    
DOI: 10.1143/JJAP.39.L141     Document Type: Article

References (9)