Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 478-486

  Kim, Joosung ^a   Byun, Dongjin ^a   Kim, Jin Sang ^b   Kum, Dong Wha ^b  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; IRRADIATION; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SUBSTRATES; SURFACE ROUGHNESS;

ATOMIC NITROGEN; DIELECTRIC BARRIER DISCHARGE METHOD; GALLIUM NITRIDE; TRIMETHYLGALLIUM; WURTZITE GALLIUM NITRIDE FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033876790     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00759-9     Document Type: Article

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