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Volumn 211, Issue 1, 2000, Pages 163-168

Double crucible LEC growth of In-doped GaAs using inner crucibles with a bottom tube

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CRUCIBLES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

EID: 0033875770     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00811-8     Document Type: Article
Times cited : (4)

References (11)
  • 7
    • 0004232799 scopus 로고
    • 2nd edition, Wiley, New York
    • W.G. Pfann, Zone Melting, 2nd edition, Wiley, New York, 1966, p. 199.
    • (1966) Zone Melting , pp. 199
    • Pfann, W.G.1
  • 9
    • 84992675174 scopus 로고    scopus 로고
    • US Patent 5370078, 1994
    • S. Kou, M.H. Lin, US Patent 5370078, 1994.
    • Kou, S.1    Lin, M.H.2
  • 11
    • 84992610055 scopus 로고
    • Technical Report ADA297039, Defense Technical Information Center, Ft. Belvoir, VA
    • R.M. Ware, Technical Report ADA297039, Defense Technical Information Center, Ft. Belvoir, VA, 1995.
    • (1995)
    • Ware, R.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.