Ferromagnetic metal/semiconductor heterostructures for magneto-electronic devices

Sensors and Actuators, A: Physical

Volumn 81, Issue 1, 2000, Pages 258-262

  Xu, Y B ^a   Kernohan, E T M ^a   Freeland, D J ^a   Tselepi, M ^a   Bland, J A C ^a   Holmes, S ^b   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; KERR MAGNETOOPTICAL EFFECT; MAGNETIC FILMS; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; ULTRATHIN FILMS;

ALTERNATING GRADIENT FIELD MAGNETOMETRY; INDIUM ARSENIDE;

SENSORS;

EID: 0033874959     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00137-5     Document Type: Article

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