High-speed mapping of grown-in defects and their influence in large-area silicon photovoltaic devices

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 346-350

  Sopori, Bhushan ^a   Wei, Chen ^a   Yi, Zhang ^a   Madjdpour, Jamal ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; INDUCED CURRENTS; LIGHT REFLECTION; LIGHT SCATTERING; PHOTOVOLTAIC CELLS;

LIGHT-BEAM-INDUCED CURRENT;

SILICON SOLAR CELLS;

EID: 0033874781     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00708-3     Document Type: Article

References (3)

1. Sopori B.L. J. Electrochem. Soc. 131:1984;667.
2. Sopori B.L. Appl. Opt. 27:1988;4676.
3. Murphy R., Sopori B.L., Rose D. Influence of dislocations on the. I-V characteristics of silicon solar cells, Symposium on Defect and Impurity Engineered Semiconductors and Devices MRS Proc. 378:1995;748.