On the determination of carrier mobility in compensated GaAs

Inorganic Materials

Volumn 36, Issue 2, 2000, Pages 100-104

  Korshunov, F P ^a   Kurilovich, N F ^a   Murin, L I ^a   Prokhorenko, T A ^a  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

ACCURACY; ARTICLE; CALCULATION; CONCENTRATION (PARAMETERS); EXPERIMENTATION; IONIZATION; PHYSICAL CHEMISTRY;

EID: 0033814825     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02758004     Document Type: Article

References (10)

1. Hall mobility in compensated gallium arsenide
2. On the separate determination of donor and acceptor concentrations
3. Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio
4. Electron mobility in n-type GaAs at 77 K: Determination of the compensation ratio
5. Ionized impurity in n-type GaAs
6. Electron mobility in high-purity GaAs
7. Irradiation-induced defects in GaAs
8. Effect of electron irradiation on the photoluminescence and electrical properties of isotopically doped gallium