메뉴 건너뛰기




Volumn 36, Issue 9, 2000, Pages 857-863

Preparation of GaAs surfaces of desired composition

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; OXIDE;

EID: 0033814028     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02758691     Document Type: Article
Times cited : (5)

References (25)
  • 1
    • 85037932328 scopus 로고
    • Perestroika tverdykh tel na granitse razdela faz (Interfacial Structural Changes in Solids), Tomsk: Tomsk. Gos. Univ.
    • (1990)
    • Mokrousov, G.M.1
  • 5
    • 85037946697 scopus 로고
    • Voltammetry of Solid Phases as a Tool for Determining the Composition of Semiconductors, Rost poluprovodnikovykh kristallov i plenok (Growth of Semiconductor Crystals and Films), Novosibirsk: Nauka
    • (1984) , Issue.PART 2 , pp. 143-151
    • Zakharchuk, N.F.1    Smirnova, T.P.2    Belyi, V.I.3    Yudelevich, I.G.4
  • 6
    • 0007873632 scopus 로고
    • Electrode potential of GaAs-solution pH equilibrium diagram
    • Arsenid galliya (Gallium Arsenide), Tomsk: Tomsk. Gos. Univ.
    • (1969) , vol.2 , pp. 220-224
    • Batenkov, V.A.1    Kataev, G.A.2
  • 23
    • 85037934384 scopus 로고
    • Surface Voltammetry of Gallium Arsenide, in Fiziko-khimicheskie metody issledovaniya khimicheskikh protsessov (Physicochemical Studies of Chemical Processes), Barnaul
    • (1988) , pp. 11-16
    • Batenkov, V.A.1    Stukalova, I.N.2
  • 25
    • 36449003626 scopus 로고
    • Effects of dissolved oxygen in a de-ionized water treatment on GaAs surface
    • (1994) J. Appl. Phys. , vol.75 , Issue.3 , pp. 1798-1803
    • Hirota, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.