SCOPUS 정보 검색 플랫폼

Volumn 7, Issue 3, 2000, Pages 267-270

The atomic structure or Si(111)-(√3 x √3)R30°-Ga determined by automated tensor leed

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; SILICON;

ARTICLE; ATOM; AUTOMATION; CALCULATION; CHEMICAL STRUCTURE; ELECTRON DIFFRACTION; SURFACE PROPERTY;

EID: 0033809191 PISSN: 0218625X EISSN: None Source Type: Journal
DOI: 10.1016/S0218-625X(00)00035-X Document Type: Article

Times cited : (6)

References (13)

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- Chester, M.¹ Gustafsson, T.²

3
- 0001654236
- (1988) Phys. Rev. , vol.37 B , pp. 2704
- Kawazu, A.¹ Sakama, H.²

4
- 33744622162
- (1995) Phys. Rev. , vol.51 B , pp. 14549
- Wu, H.¹ Lapayre, G.J.²

8
- 0007876017
- Surface Crystallography LEED (Springer, Berlin, 1979)
- (1979)
- Van Hove, M.A.¹ Tong, S.Y.²

9
- 0007970720
- Low-Energy Electron Diffraction (Springer-Verlag, New York)
- (1986)
- Van Hove, M.A.¹ Weinberg, W.H.² Chan, C.M.³

13
- 0000261924
- (1984) Phys. Rev. , vol.30 , pp. 561
- Jansen, H.L.¹ Freeman, A.J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.