Electronic density of states at the interface between silicon and lead borosilicate glass

Inorganic Materials

Volumn 36, Issue 5, 2000, Pages 502-503

  Vlasov, S I ^a   Parchinskii, P B ^a   Olmatov, B A ^a  

^a NATIONAL UNIVERSITY OF UZBEKISTAN   (Uzbekistan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BORON; GLASS; LEAD; LEAD OXIDE; SILICATE; SILICON; TANTALUM;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; CRYSTALLIZATION; ELECTRON TRANSPORT; SEMICONDUCTOR; TEMPERATURE;

EID: 0033809077     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02758057     Document Type: Article

References (15)

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12. II Vsesoyuznaya konferentsiya po fizike okisnykh plenok
13. Eksperimental'nye issledovaniya uslovii kristallizatsii peturgicheskikh rasplavov i stekol
14. Properties of lead borosilicate glasses