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Volumn 11, Issue 2-3, 2000, Pages 155-160

Toward a more accurate silicon stereochemistry: An electron diffraction study of the molecular structure of tetramethylsilane

(4) Campanelli, Anna Rita a Ramondo, Fabio b Domenicano, Aldo b Hargittai, István c,d

a SAPIENZA UNIVERSITY OF ROME (Italy)

b UNIVERSITY OF L'AQUILA (Italy)

c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS (Hungary)

d EÖTVÖS LORÁND UNIVERSITY (Hungary)

Author keywords

ab initio MO calculations; Gas phase electron diffraction; Methyl torsional barrier; Si Me bond length; Tetramethylsilane

Indexed keywords

SILANE DERIVATIVE; SILICON; TETRAMETHYLSILANE; UNCLASSIFIED DRUG;

ACCURACY; ARTICLE; CALCULATION; CHEMICAL BINDING; CHEMICAL STRUCTURE; CONFORMATION; ELECTRON DIFFRACTION; MOLECULAR MODEL; STEREOCHEMISTRY; STRUCTURE ANALYSIS;

EID: 0033795403 PISSN: 10400400 EISSN: None Source Type: Journal
DOI: 10.1023/a:1009213726034 Document Type: Article

Times cited : (28)

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