Deposition of SiO2 thin films by combined low-energy ion-beam and molecular-beam epitaxial method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1327-1328

  Shibata, Hajime ^a   Kimura, Shinji ^a   Takatoh, Hidetaka ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Ion beam deposition; Low energy ion beam; Molecular beam epitaxy; SiO2 thin films

Indexed keywords

DEPOSITION; ELECTRON ENERGY LEVELS; ION BEAMS; MOLECULAR BEAM EPITAXY; SILICA; STOICHIOMETRY; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ION BEAM DEPOSITION; LOW ENERGY ION BEAM;

THIN FILMS;

EID: 0033750586     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1327     Document Type: Article

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