Multiply-charged ion beam induced dry etching of semiconductor materials

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 40-44

  Meguro, T ^a   Sakamoto, M ^b   Takai, H ^b   Aoyagi, Y ^a  

^a RIKEN   (Japan)

^b TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ION BEAMS; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTER DEPOSITION;

MULTIPLY-CHARGED ION BEAMS;

NANOSTRUCTURED MATERIALS;

EID: 0033750513     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00531-0     Document Type: Article

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