Effect of Ti insertion between Cu and TiN layers on electromigration reliability in Cu/(Ti)/TiN/Ti layered damascene interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 333-338

  Abe, Kazuhide ^a   Tokitoh, Syunichi ^a   Chen, Shih Chang ^a   Kanamori, Jun ^a   Onoda, Hiroshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; INTERFACES (COMPUTER); METALLIC FILMS; METALLOGRAPHIC MICROSTRUCTURE; TITANIUM; TITANIUM NITRIDE; WETTING;

DAMASCENE INTERCONNECTS;

INTEGRATED CIRCUITS;

EID: 0033750363     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (12)