Electron density dependence of the excitonic absorption thresholds of GaAs quantum wells

Physica Status Solidi (A) Applied Research

Volumn 178, Issue 1, 2000, Pages 465-470

  Kaur, R ^a,b   Shields, A J ^a   Osborne, J L ^a,b   Simmons, M Y ^b   Ritchie, D A ^b   Pepper, M ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033748881     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200003)178:1<465::AID-PSSA465>3.0.CO;2-E     Document Type: Article

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