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Volumn 25, Issue 5, 2000, Pages 300-302

1.55 μm spot-size converter integrated-laser diode fabricated by selective-area metalorganic vapor-phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

EID: 0033748834     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(20000605)25:5<300::AID-MOP4>3.0.CO;2-S     Document Type: Article
Times cited : (2)

References (7)
  • 1
    • 0029251462 scopus 로고
    • Highly efficient coupling semiconductor spot-size converter with an InP/InA1As multiple-quantum-well core
    • N. Yoshimoto, K. Kswano, H. Takeuchi, S. Kondo, and Y. Noguchi, Highly efficient coupling semiconductor spot-size converter with an InP/InA1As multiple-quantum-well core, Appl Opt 34 (1995), 1007-1014.
    • (1995) Appl Opt , vol.34 , pp. 1007-1014
    • Yoshimoto, N.1    Kswano, K.2    Takeuchi, H.3    Kondo, S.4    Noguchi, Y.5
  • 3
    • 0031212481 scopus 로고    scopus 로고
    • Highly-coupling efficiency of a 1.3 μ.M spot-size converter integrated laser diode with pn-buried heterostructure for high-temperature operation
    • Y. Suzaki, O. Mitomi, Y. Kondo, Y. Sakai, Y. Kawaguchi, Y. Tohmori, Y. Kadota, and M. Yamamoto, Highly-coupling efficiency of a 1.3 μ.m spot-size converter integrated laser diode with pn-buried heterostructure for high-temperature operation, J Lightwave Technol 15 (1997), 1602-1607.
    • (1997) J Lightwave Technol , vol.15 , pp. 1602-1607
    • Suzaki, Y.1    Mitomi, O.2    Kondo, Y.3    Sakai, Y.4    Kawaguchi, Y.5    Tohmori, Y.6    Kadota, Y.7    Yamamoto, M.8
  • 4
    • 0029386790 scopus 로고
    • High temperature operation with low-loss coupling to fibre for narrow-beam 1.3 μ.M lasers with butt-jointed selective grown spot-size converter
    • Y. Tohmori, Y. Suzaki, H. Ohashi, Y. Sasaki, Y. Kondo, H. Okamoto, M. Ookamoto, Y. Kadota, O. Mitomi, Y. Itaya, and T. Sugie, High temperature operation with low-loss coupling to fibre for narrow-beam 1.3 μ.m lasers with butt-jointed selective grown spot-size converter, Electron Lett 31 (1995), 1838-1839.
    • (1995) Electron Lett , vol.31 , pp. 1838-1839
    • Tohmori, Y.1    Suzaki, Y.2    Ohashi, H.3    Sasaki, Y.4    Kondo, Y.5    Okamoto, H.6    Ookamoto, M.7    Kadota, Y.8    Mitomi, O.9    Itaya, Y.10    Sugie, T.11
  • 6
    • 0343523676 scopus 로고    scopus 로고
    • 1.3 μm spot-size converter integrated laser diodes simply fabricated by narrow-stripe selective MOVPE
    • H. Yamazaki, K. Kudo, T. Sasaki, and M. Yamaguchi, 1.3 μm spot-size converter integrated laser diodes simply fabricated by narrow-stripe selective MOVPE, Tech Dig OECC'97, 1997, pp. 440-441.
    • (1997) Tech Dig OECC'97 , pp. 440-441
    • Yamazaki, H.1    Kudo, K.2    Sasaki, T.3    Yamaguchi, M.4
  • 7
    • 0027906407 scopus 로고
    • Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structure
    • T. Sasaki, M. Kitamura, and I. Kuomito, Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structure, J Cryst Growth 132 (1993), 435-443.
    • (1993) J Cryst Growth , vol.132 , pp. 435-443
    • Sasaki, T.1    Kitamura, M.2    Kuomito, I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.