Role of the spacer oxide in determining worst-case hot-carrier stress conditions for NMOS LDD devices

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 83-92

  King, Everett E ^a   Lacoe, Ronald C ^a   Wang Ratkovic, Janet ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC RESISTANCE; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS; STRESS ANALYSIS; THERMAL EFFECTS;

LIGHTLY-DOPED-DRAIN (LDD) NMOS DEVICES;

MOS DEVICES;

EID: 0033748596     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)