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Volumn 3952, Issue , 2000, Pages 248-255
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Significant improvement of an AlGaAs-GaAs NpnP optical thyristor with mirror layers
a a a a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC POTENTIAL;
LIGHT EMISSION;
MIRRORS;
OPTOELECTRONIC DEVICES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SENSITIVITY ANALYSIS;
DEPLETED OPTICAL THYRISTORS (DOT);
THYRISTORS;
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EID: 0033748580
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (5)
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