Electron-hole drops in synthetic diamond

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 428-431

  Thonke, K ^a   Schliesing, R ^b   Teofilov, N ^a   Zacharias, H ^b   Sauer, R ^a   Zaitsev, A M ^c   Kanda, H ^d   Anthony, T R ^e  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c UNIVERSITY OF HAGEN   (Germany)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; ENERGY GAP; HIGH TEMPERATURE PROPERTIES; LASER PULSES; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING DIAMONDS;

ELECTRON-HOLE DROPS;

SYNTHETIC DIAMONDS;

EID: 0033746771     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00315-5     Document Type: Article

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