The evolution of the resistance of aluminum interconnects during electromigration

Microelectronics Reliability

Volumn 40, Issue 6, 2000, Pages 981-990

  Doan, Jonathan C ^a   Bravman, John C ^a   Flinn, Paul A ^a   Marieb, Thomas N ^b  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC RESISTANCE MEASUREMENT; ELECTROMIGRATION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

HIGH VOLTAGE SCANNING ELECTRON MICROSCOPY (HVSEM);

INTERCONNECTION NETWORKS;

EID: 0033745443     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00340-6     Document Type: Article

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