Behavioral IGBT modeling for predicting high frequency effects in motor drives

IEEE Transactions on Power Electronics

Volumn 15, Issue 2, 2000, Pages 354-360

  Tichenor, Jerry L ^b   Sudhoff, Scott D ^a,c   Drewniak, James L ^a,b  

^a IEEE

^b Architectural and Environmental Engineering   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC MOTORS; FREQUENCY RESPONSE; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSIENTS;

INSULATED GATES BIPOLAR TRANSISTOR; TURN OFF TRANSIENTS; TURN ON TRANSIENTS;

ELECTRIC DRIVES;

EID: 0033743830     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.838108     Document Type: Article

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