Crystallization of amorphous GeSe2 semiconductor by isothermal annealing without light radiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1058-1061

  Sakai, Kentaro ^a   Yoshino, Kenji ^a   Fukuyama, Atsuhiko ^a   Yokoyama, Hirosumi ^a   Ikari, Tetsuo ^a   Maeda, Kouji ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

Amorphous semiconductor; Chalcogenide glasses; Crystallization; DSC; Raman spectra; T T T diagram; X ray diffraction

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; GLASS; LIGHT; QUENCHING; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SEMICONDUCTOR; CHALCOGENIDE GLASSES; REFLECTION INDEX;

AMORPHOUS MATERIALS;

EID: 0033742364     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1058     Document Type: Article

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