High-power AlGaInAs/GaAs microstack laser bars

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3947, Issue , 2000, Pages 50-57

  Hanke, C ^a   Korte, L ^a   Acklin, G ^a   Behringer, M ^a   Herrmann, G ^a   Luft, J ^a   De Odorico, B ^a   Marchiano, M ^a   Wilhelmi, J ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH POWER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TUNNEL JUNCTIONS;

HIGH POWER MICROSTACK LASERS;

SEMICONDUCTOR LASERS;

EID: 0033738292     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.382106     Document Type: Conference Paper

References (2)