Characterization of self-assembled quantum dots using the phonon-induced features of PL spectra

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 330-332

  Fomin, V M ^a,b   Klimin, S N ^a,b   Gladilin, V N ^a,b   Devreese, J T ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b Universitatea de Stat din Moldova   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODYNAMICS; ELECTRON TRANSITIONS; EXCITONS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SPECTRUM ANALYSIS; SUBSTRATES; SURFACE TREATMENT; ZINC COMPOUNDS;

ELECTRON PHONON INTERACTION; OPTICAL PHONONS; QUANTUM DOT EXCITON STATE; SELF ASSEMBLED QUANTUM DOTS; THERMALLY ACTIVATED SURFACE REORGANIZATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033737553     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00351-8     Document Type: Article

References (13)

1. Nirmal M., Murray C.B., Norris D.J., Bawendi M.G. Z. Phys. D. 26:1993;361.
2. Jungnickel V., Henneberger F. J. Lumin. 70:1996;238.
3. Klein M.C., Hache F., Ricard D., Flytzanis C. Phys. Rev. B. 42:1990;11 123.
4. Fomin V.M., Gladilin V.N., Devreese J.T., Pokatilov E.P., Balaban S.N., Klimin S.N. Phys. Rev. B. 57:1998;2415.
5. Fomin V.M., Pokatilov E.P., Devreese J.T., Klimin S.N., Gladilin V.N., Balaban S.N. Solid State Electron. 42:1998;1309.
6. Rabe M., Lowisch M., Henneberger F. J. Crystal Growth. 184/185:1998;248.
7. Lowisch M., Rabe M., Kreller F., Henneberger F. Appl. Phys. Lett. 74:1999;2489.
8. Klimin S.N., Pokatilov E.P., Fomin V.M. Phys. Stat. Sol. B. 190:1995;441.
9. Chamberlain M.P., Cardona M., Ridley B.K. Phys. Rev. B. 48:1993;14 356.
10. Fuchs R., Kliewer K.L. Phys. Rev. 140 A:1965;2076.
11. K.H. Hellwege, (Ed.), Semiconductors. Physics of II-VI and I-VII compounds, Semimagnetic Semiconductors, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. b, Springer, Berlin, 1982.
12. Hölscher H.W., Nöthe A., Uihlein Ch. Phys. Rev. B. 31:1985;2379.
13. Puls J., Rossin V.V., Henneberger F., Zimmermann R. Phys. Rev. B. 54:1996;4974.