Valence-band coupling effect on Fano profiles of magnetoexcitons in semiconductor quantum wells

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 535-537

  Hino, Ken Ichi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON RESONANCE; EXCITONS; MAGNETIC FIELDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

COULOMB COUPLING; FANO RESONANCE; MAGNETOEXCITONS; MULTICHANNEL RESONANT SCATTERING THEORY; VALENCE BAND COUPLING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033736803     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00282-3     Document Type: Article

References (9)

1. Fano U. Phys. Rev. 124:1961;1866.
2. Oberli D.Y.et al. Phys. Rev. B. 49:1994;5757.
3. Bar-Ad S.et al. Phys. Rev. Lett. 78:1997;1363.
4. Holfeld C.P.et al. Phys. Rev. Lett. 81:1998;874.
5. U. Ekenberg, M. Altarelli, Phys. Rev. B 35 (1987) 7585, and references therein.
6. Winkler R. Phys. Rev. B. 51:1995;14 395.
7. Rau G.et al. Phys. Rev. B. 58:1998;7210.
8. Hino K. J. Phys. Soc. Japan. 67:1998;3159.
9. K. Hino, J. Phys. Soc. Japan 69 (2000) in press.