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Journal of Crystal Growth

Volumn 212, Issue 1, 2000, Pages 352-355

Effect of rapid thermal annealing on InGaAs/GaAs quantum wells

(7) Zhuang, Q D a Li, J M b Zeng, Y P b Yoon, S F a Zheng, H Q a Kong, M Y b Lin, L Y b

a Sch Elec Electron Eng (Singapore)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

DOUBLE-CRYSTAL X RAY DIFFRACTION (DCXRD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033736802 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00018-X Document Type: Article

Times cited : (18)

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