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Volumn 15, Issue 2, 2000, Pages 386-398

Analysis of the influence of diode reverse recovery on the operation and design of high-frequency rectifiers

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; NONLINEAR NETWORK ANALYSIS; PIECEWISE LINEAR TECHNIQUES; POWER CONVERTERS; SEMICONDUCTOR DIODES;

EID: 0033734230     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.838112     Document Type: Article
Times cited : (13)

References (10)
  • 5
    • 0023996939 scopus 로고
    • A comparison of half-bridge resonant converter topologies
    • Apr.
    • R. L. Steigerwald, "A comparison of half-bridge resonant converter topologies," IEEE Trans. Power Electron., vol. 3, pp. 174-182, Apr. 1988.
    • (1988) IEEE Trans. Power Electron. , vol.3 , pp. 174-182
    • Steigerwald, R.L.1
  • 6
    • 0025462766 scopus 로고
    • Instability, subharmonics, and chaos in power electronic systems
    • July
    • J. H. B. Deane and D. C. Hamill, "Instability, subharmonics, and chaos in power electronic systems," IEEE Trans. Power Electron., vol. 5, pp. 260-268, July 1990.
    • (1990) IEEE Trans. Power Electron. , vol.5 , pp. 260-268
    • Deane, J.H.B.1    Hamill, D.C.2
  • 7
  • 8
    • 0029219299 scopus 로고
    • Simple piecewise-linear diode model for transient behavior
    • L. V. Karadzinov, D. J. Jefferies, G. L. Arsov, and J. H. B. Deane, "Simple piecewise-linear diode model for transient behavior," Int. J. Electron., vol. 78, no. 1, pp. 143-160, 1995.
    • (1995) Int. J. Electron. , vol.78 , Issue.1 , pp. 143-160
    • Karadzinov, L.V.1    Jefferies, D.J.2    Arsov, G.L.3    Deane, J.H.B.4
  • 9
    • 33749955148 scopus 로고
    • Influence of the circuit parameters on the DH phenomenon
    • Novi Sad, Yugoslavia, Sept. 27-29
    • G. L. Arsov and L. V. Karadzinov, "Influence of the circuit parameters on the DH phenomenon," in Proc. 8th Symp. Power Electron. - Ee'95, Novi Sad, Yugoslavia, Sept. 27-29, 1995, pp. 253-258.
    • (1995) Proc. 8th Symp. Power Electron. - Ee'95 , pp. 253-258
    • Arsov, G.L.1    Karadzinov, L.V.2
  • 10
    • 0029181047 scopus 로고
    • Modeling and characterization of reverse recovery performance of high-power GaAs Schottky and silicon P-i-N rectifiers
    • Atlanta, GA, June 18-22
    • C. R. Winterhalter, S. Pendharkar, and K. Shenai, "Modeling and characterization of reverse recovery performance of high-power GaAs Schottky and silicon P-i-N rectifiers," in Proc. 26th Annu. IEEE Power Electron. Spec. Conf. - PESC'95, vol. 2, Atlanta, GA, June 18-22, 1995, pp. 847-850.
    • (1995) Proc. 26th Annu. IEEE Power Electron. Spec. Conf. - PESC'95 , vol.2 , pp. 847-850
    • Winterhalter, C.R.1    Pendharkar, S.2    Shenai, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.