Distribution of average electric field in tris-(8-hydroxyquinoline)aluminum and 4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl-based double-layer light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1382-1386

  Yamada, Toshiki ^a   Rohlfing, Frank ^a   Tsuisui, Tetsuo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

4,4 bisn (1 naphthyl) n phenylaminoj biphenyl; Electric field distribution; Electroabsorption; Organic light emitting diodes; Tris (8 hydroxyquinoline)aiuminum

Indexed keywords

BISNAPHTHYLPHENYLAMINO BIPHENYL; DOUBLE LAYER LIGHT EMITTING DIODES; ELECTRIC FIELD DISTRIBUTION; ELECTROABSORPTION SPECTROSCOPY; INDIUM TIN OXIDE; TRISHYDROXYQUINOLINE ALUMINUM;

ABSORPTION SPECTROSCOPY; ALUMINUM COMPOUNDS; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; MAGNESIUM ALLOYS; PHENOLS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

LIGHT EMITTING DIODES;

EID: 0033734139     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1382     Document Type: Article

References (18)

1. R. H. Friend, R. W. Gymer, A. B. Holmes, J. H. Burroughes, R. N. Marks, C. Taliani, D. D. C. Bradley, D. A. Dos Santos, J. L. Brédas, M. Lögdlund and W. R. Salaneck: Nature 14 (1999) 121.
2. C. W. Tang and S. A. VanSlyke: Appl. Phys. Lett. 51 (1987) 913.
3. C. Adachi, S. Tokito, T. Tsutsui and S. Saito: Jpn. J. Appl. Phys. 27 (1988) L269.
4. C. W. Tang, S. A. VanSlyke and C. H. Chen: J. Appl. Phys. 65 (1989) 3610.
5. P. E. Burrows and S. R. Forrest: Appl. Phys. Lett. 64 (1994) 2285.
6. S. Egusa, A. Miura, N. Gemma and M. Azuma: Jpn. J. Appl. Phys. 33 (1994) 2741.
7. L. S. Hung, C. W. Tang and M. G. Mason: Appl. Phys. Lett. 70 (1997) 152.
8. M. Matsumura, T. Akai, M. Saito and T. Kimura: J. Appl. Phys. 79 (1996) 264.
9. I. D. Parker: J. Appl. Phys. 75 (1994) 1659.
10. D. V. Khramtchenkov, H. Bässler and V. I. Arkhipov: J. Appl. Phys. 79 (1996) 9283.
11. J. Shen and J. Yang: J. Appl. Phys. 83 (1998) 7706.
12. R. H. Parmenter and W. Ruppel: J. Appl. Phys. 30 (1959) 1548.
13. J. C. Scott, G. G. Malliaras, J. R. Salem, P. J. Brock, L. Bozano and S. A. Carter: Proc. SPIE 3476 (1998) 111.
14. J. C. Scott, S. Karg and S. A. Carter: J. Appl. Phys. 82 (1997) 1454.
15. I. H. Campbell, M. D. Joswick and I. D. Parker: Appl. Phys. Lett. 67 (1995) 3171.
16. I. H. Campbell, J. P. Ferraris, T. W. Hagler, M. D. Joswick, I. D. Parker and D. L. Smith: Polym. Adv. Technol. 8 (1997) 417.
17. F. Rohlfing, T. Yamada and T. Tsutsui: J. Appl. Phys. 86 (1999) 4978.
18. T. Tsutsui: MRS Bull. 22 (1997) 39.