Study of trap levels by electrical techniques in p-type CuInSe2 thin films prepared using Chemical Bath Deposition

Journal of Materials Science

Volumn 35, Issue 10, 2000, Pages 2619-2624

  Zeenath, N A ^a   Pillai, P K V ^a,b   Bindu, K ^a   Lakshmy, M ^a   Vijayakumar, K P ^a  

^a Department of Physics   (India)

^b MAHARAJA S COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CURRENTS; ELECTRON TRAPS; FILM PREPARATION; GAS ADSORPTION; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

CHEMICAL BATH DEPOSITION (CBD); COPPER INDIUM SELENIDE; DARK CONDUCTIVITY; THERMALLY STIMULATED CURRENT (TSC) MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0033733089     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004783517595     Document Type: Article

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