High-power, highly-reliable, Al-free active region laser diodes in the 785-830 nm region

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3947, Issue , 2000, Pages 12-20

  Nightingale, J L ^a   Finander, M J ^a   Nabiev, R ^a   Kuuslahti, T ^a   Kongas, J ^a   Salokatve, A ^a  

^a Coherent Semiconductor Group ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER LASERS; INFRARED RADIATION; SEMICONDUCTOR DEVICE STRUCTURES;

EDGE-EMITTING LASER DIODES; NEAR-INFRARED LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0033729877     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.382091     Document Type: Conference Paper

References (20)