Modification of the refractive index and the dielectric constant of silicon dioxide by means of ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 171-176

  Swart, J W ^a   Diniz, J A ^a   Doi, I ^a   De Moraes, M A B ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BONDS; DIELECTRIC FILMS; FLUORINE; ION BOMBARDMENT; ION IMPLANTATION; MOS CAPACITORS; PERMITTIVITY; RADIATION EFFECTS; REFRACTIVE INDEX; SILICA; SILICON WAFERS;

ELECTRIC INSULATING FILMS;

ELECTRIC INSULATING MATERIALS;

EID: 0033729342     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00650-3     Document Type: Article

References (7)

1. Qin S., Zhou Y.Z., Chan C., Chu P.K. IEEE Electrons Dev. Lett. 19(11):1998;420.
2. Kim K., Kwon D., Lee G.S. Thin Solid Films. 332(1-2):1998;369.
3. Yun S.M., Chang H.Y., Kang M.S., Choi C.K. Thin Solid Films. 341(1-2):1999;109.
4. Pankov V., Alonso J.C., Ortiz A. Japanese J. Appl. Phys. 37(11):1998;6135.
5. Y.H. Kim, H.H. Kim, S.K. Lee, H.J. Kim, S.O. Kim, Y.S. Sohn, J. Korean Phys. Soc. 33 (1998) S179, Suppl.
6. Kim J.H., Seo S.H., Yun S.M., Chang H.Y., Lee K.M., Choi C.K. J. Electrochem. Soc. 143(9):1996;2990.
7. A Grill, Patel V. J. Appl. Phys. 85(6):1999;3314.