Influence of tin ion implantation on the damage and annealing kinetics of sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 193-197

  McHargue, Carl J ^a   Romana, L J ^b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b UNIVERSITÉ DES ANTILLES ET DE LA GUYANE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTALLIZATION; INTERFACES (MATERIALS); ION BOMBARDMENT; ION IMPLANTATION; RADIATION DAMAGE; SINGLE CRYSTALS; TIN;

RADIATION INDUCED AMORPHIZATION;

SAPPHIRE;

EID: 0033728792     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00654-0     Document Type: Article

References (5)

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3. White C.W., Boatner L.A., Sklad P.S., McHargue C.J., Rankin J., Farlow G.C., Aziz M. Nucl. Instr. and Meth. B. 32:1988;11.
4. McHargue C.J., Sklad P.S., McCallum J.C., White C.W., Perez A., Abonneay E., Marest G. Nucl. Instr. and Meth. B. 46:1990;74.
5. C.M. Davisson, I. Manning, NRL Report 8859, Naval Research Laboratory, Washington, DC, 1986.