Thickness dependence of photoluminescence excitation spectra of GaAs thin films due to confinement of excitonic polaritons

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 512-515

  Akiyama, Koich ^a   Tomita, Nobuyuki ^a   Nomura, Yoshinori ^a   Isu, Toshiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ABSORPTION; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; THIN FILMS;

PHOTOLUMINESCENCE EXCITATION; TRANSFER MATRIX METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033728429     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00228-8     Document Type: Article

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