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Volumn 87, Issue , 2000, Pages 512-515
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Thickness dependence of photoluminescence excitation spectra of GaAs thin films due to confinement of excitonic polaritons
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON ABSORPTION;
ELECTRON ENERGY LEVELS;
ELECTRON RESONANCE;
EXCITONS;
PHOTOLUMINESCENCE;
SEMICONDUCTING FILMS;
THIN FILMS;
PHOTOLUMINESCENCE EXCITATION;
TRANSFER MATRIX METHOD;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033728429
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-2313(99)00228-8 Document Type: Article |
Times cited : (3)
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References (7)
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