Technology CAD based statistical simulation of MOSFETs

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 1001-1007

  Shigyo, Naoyuki ^a   Wakita, Naoki ^a   Morishita, Tetsuji ^a   Sugawara, Kenichi ^a   Asahi, Yoshinori ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; STATISTICAL METHODS; VLSI CIRCUITS;

PROCESS FLUCTUATIONS;

MOSFET DEVICES;

EID: 0033727870     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00002-2     Document Type: Article

References (12)

1. Director SW, Maly W, editors. Statistical approach to VLSI. Amsterdam: North-Holland, 1994.
2. Director S.W., Maly W., Strojwas A.J. VLSI design for manufacturing: yield enhancement. 1990;Kluwer Academic Publishers, Dordrecht.
3. Walker DMH, Kibarian JK, Kellen ChS, Strojwas AJ. A TCAD framework for development and manufacturing. In: Fashing F, et al. editors. Technology CAD Systems, 1993. p. 83.
4. Jones R.E., Mele T.C. Use of screening and response surface measuremental designs for development of 0.5-μm CMOS self-aligned titanium silicide process. IEEE Trans Semiconductor Manufacturing. 4:1991;281.
5. Axelrad V, Long G, Kuepper P. Elimination of meshing noise in statistical TCAD. Proc IWSM'97, 1997. p. 106.
6. Shigyo N, Tanimote H, Morishita T, Sugawara K, Wakita N, Ashahi Y. Statistical simulation of MOSFETs using TCAD: meshing noise problem and selection of factors. Proc IWSM'98, 1998. p. 10.
7. pdFab version 3.1 User's Reference Manual, PDF Solutions, 1997.
8. Nakamura M., Kusunoki N., Kanemura T., Aoki N. Simulation of boron diffusion in high concentration using a pair diffusion model: fast numerical computation scheme and simulation accuracy. IEICE Tech Rep. SDM95-115:1995;7. [in Japanese].
9. Enda T., Shigyo N. Improvement of subthreshold-swing and short-channel effects of buried channel MOSFETs: counter-doped surface-channel MOSFET(CDSC). IEICE Trans. J79-C-II:1996;244. [in Japanese].
10. BSIM3v3 Manual, UC Berkeley, 1995.
11. Greenwood J.A., Sandomire M.M. Sample size required for estimating the standard deviation as a per cent of its true value. J Americal Statistical Association. 45:1950;257.
12. Orlowski M, Mazure C, Law F. Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion. Tech Dig IEDM87, 1987. p. 632.