High-spatial-frequency MOS transistor gate length variations in SRAM circuits

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2000, Pages 25-31

  Ouyang, X ^a   Deeter, T ^a   Berglund, C N ^a   Pease, R F W ^a   McCord, M A ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON BEAM LITHOGRAPHY; FOURIER TRANSFORMS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY;

CRITICAL DIMENSION; PROXIMITY EFFECT; STATIC RANDOM ACCESS MEMORY; STEPPER LENS COMA EFFECT; TRANSISTOR GATE LENGTH;

MOSFET DEVICES;

EID: 0033727347     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)