Temperature-dependent study of the quasi-Fermi level separation in double quantum well p-i-n structures

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 265-274

  Kluftinger, Benjamin ^a   Barnham, Keith ^a   Nelson, Jenny ^a   Foxon, Tom ^b   Cheng, Tin ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRONS; FERMI LEVEL; HOLE TRAPS; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

ALUMINUM GALLIUM ARSENIDE; QUASI FERMI LEVEL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033726842     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00490-6     Document Type: Article

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