TEM cross-section investigations of epitaxial Ba2Bi4Ti5O18 thin films on LaNiO3 bottom electrodes on CeO2/YSZ-buffered Si(100)

Crystal Research and Technology

Volumn 35, Issue 6, 2000, Pages 641-651

  Hesse, Dietrich ^a   Zakharov, N D ^a   Pignolet, A ^a   James, A R ^a   Senz, S ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRODES; FERROELECTRIC MATERIALS; FILM GROWTH; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MATHEMATICAL MODELS; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

BARIUM BISMUTH TITANATE; CERIUM OXIDE; LANTHANUM NICKEL OXIDES;

THIN FILMS;

EID: 0033724860     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200007)35:6/7<641::AID-CRAT641>3.0.CO;2-Z     Document Type: Article

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