Effect of source and load resistance on the performance of bistable lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 4, 2000, Pages 380-382

  Madhan, M G ^a   Vaya, P R ^b   Gunasekaran, N ^a  

^a ANNA UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; HYSTERESIS; MATHEMATICAL MODELS; OPTICAL BISTABILITY;

LOAD RESISTANCE; SOURCE RESISTANCE;

QUANTUM WELL LASERS;

EID: 0033724546     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.839025     Document Type: Article

References (4)

1. H. Uenohara, R. Takahashi, Y. Kawamura, and H. Iwamura, "Static and dynamic response of multiple quantum well voltage controlled bistable laser diodes," IEEE J. Quantum Electron., vol. 32, no. 5, pp. 873-883, 1996.
2. I. P. Kaminow and R. S. Tucker, "Frequency characteristics of directly modulated InGaAsP ridge wave guide and buried hetrostructure lasers," J. Lightwave Technol., vol. LT-2, pp. 385-393, Aug. 1984.
3. M. F. Lu, J. S. Deng, C. Juang, M. J. Jou, and B. J. Lee, "Equivalent circuit model for quantum well lasers," IEEE J. Quantum Electron., vol. 31, pp. 1418-1421, Aug. 1995.
4. R. Nagarajan, T. Fukushima, S. W. Corzine, and J. E. Bowers, "Effects of carrier transport on high speed quantum well lasers," Appl. Phys. Lett., vol. 59, pp. 1835-1837, 1991.