Characterisation of aluminium passivation for TMAH based anisotropic etching for MEMS applications

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2000, Pages 210-213

  Lian, Knut ^a   Smith, Stewart ^a   Rankin, N ^a   Walton, A J ^a   Gundlach, Alan ^a   Stevenson, Tom ^a  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMMONIUM COMPOUNDS; CHEMICAL POLISHING; ELECTRIC VARIABLES MEASUREMENT; LITHOGRAPHY; MASKS; PASSIVATION; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

ANISOTROPIC ETCHING; LINEWIDTH TEST STRUCTURE; TETRAMETHYL AMMONIUM HYDROXIDE;

MICROELECTROMECHANICAL DEVICES;

EID: 0033724121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)